HOME Japanese Site Map Link Contact Sumitomo Heavy Industries Ion Technology Co., Ltd.
About Us Products News Reliase Recruitment menu

SEN's Research and Development For inquiry on the contents of Sumitomo Heavy Industries Ion Technology's R&D, please click here.

2018EDTM Author Title Related I/I
Shiro Ninomiya Novel Technique for Production-Yield Enhancement of Semiconductor Devices MC, HC, HE, HCMC, Application
2016IIT Author Title Related I/I
Kazuhisa Ishibashi Intentional Two-Dimensional Non-Uniform Dose Implant with High Dynamic Dose Range MC
Shiro Ninomiya High-Accuracy Two-Dimensional Intentional Non-Uniform Dose Implant: MIND 2.0 MC, HE
Shiro Ninomiya A Beam Quality Control Method in SAion Ion Implanter HCMC
Haruka Sasaki Method of Beam Energy Adjustment by Using Beam Parallelism HE
Yoji Kawasaki Sheet Resistance Dependence on Ion Angle Deviation MC
Makoto Sano Change of V-Curve Behavior Depending on Ion Angle Deviation in Channeling Condition MC
2014IIT Author Title Related I/I
G. Fuse Doping Mechanism of Helium-based Plasma PD
N. Suetsugu Introduction of the SAion, a 450mm Ion Implanter Series, Covering Medium Current and High Current Regions MC, HC
K. Watanabe Introduction of the S-UHE, a Single-wafer Ultra-high Energy Ion Implanter HE
M. Sato Estimation of Plasma Density Distribution in IHC Source by Means of FEM Calculation MC, HC, HE
S. Ninomiya Precise Beam Angle Control in the S-UHE, SENfs Single-Wafer Ultra-High Energy Ion@Implanter HE
S. Ninomiya Symmetric Beam Line Technique for a Single-Wafer Ultra-High Energy Ion Implanter HE
S. Ninomiya SENfs SAVING Techniques for Productivity Enhancement HC
2012IIT Author Title Related I/I
Makoto Sano Change of Fluorine Distribution Depending on Multi-Implant Conditions HC
Shiro Ninomiya MILD System: Maskless Implantation for Local Doping HC
Masazumi Koike Introduction of the MC3-II/GP System, Medium Current Ion Implanter with Enhanced Multi-Charge Beam Current MC
Yasuharu Okamoto More Universal Dose Patterns by Single-Step Ion Implantation MC,HC
Shiro Ninomiya F-SAVING System; Productivity Improvement for the SHX-III HC
2010IIT Author Title Related I/I
Shiro Ninomiya Manufacturing-Phase Application of SEN's MIND System MC application
Noriyuki Suetsugu Demand for Image Sensor Devices on High Energy Implantation and Solution with the UHE, an Higher Energy Implanter HE
Shiro Ninomiya A Productivity Improvement Method on SEN's Single-Wafer High-Current Ion Implanter, the SHX Series HC
2008IIT Author Title Related I/I
Makoto Sano Accurate Dose Control with Pressure Compensation System on Single-Wafer Ion Implanters HC
Shiro Ninomiya Non-Uniform Dose Mapping Controlled by Modulated Vertical and Horizontal Scans MC,HC
Fumiaki Sato Implant Angle Monitor System of MC3-II MC
Michiro Sugitani Introduction of the MC3-II/WR System, an Extended Energy Medium Current Ion Implanter MC
Michiro Sugitani Introduction of the SHX-III System, A Single Wafer High-current ion implanter HC
2006IIT Author Title Related I/I
Yuji Kikuchi Profile and Angle Measurement System of SHX HC
Noriyuki Suetsugu Implant Angle Deviation Reduction in Batch-Type High Energy Implanter HE
Emi Oga Reduction of the Wafer Pattern Damage on the Batch-type High Current Ion Implanters HC
Keio University Formation of ultra shallow junctions less than 10nm with the combination of low energy B ion implantation and laser annealing HC
2004IIT Author Title Related I/I
Genshu Fuse Electrical Characteristics Change though Difference of Crystal Damage induced by Various Implant Conditions HC,MC
Hisaki Izutani Evaluation of several implanted wafers to extend the applicable temperature range of the REAL method HC application
Norishige Suetsugu Self-Adjustability of Plasma Shower under a Bunched High-Energy Beam Condition HE
Toshiharu Suzuki Flat Panel Display-Impurity doping technology for flat panel displays- FPD
Hirohiko Murata Hydrogen reduction on non-analyzed Implantation system FPD
2002IIT Author Title Related I/I
Makoto Sano Dose Monitoring of Heavy Ion Implantation by Therma-Wave Signal MC
Mitsukuni Tsukihara Introducing the LEX / LEX3, New Low Energy High Current Implanters HC
Makoto Sano Plasma Electron Flood for a Scanned Beam Implanter MC
Precision Halo Control with Antimony and Indium on Axcelis Medium Current Ion Implanters MC
Masateru Sato Introducing the ORion II NV7392 Flat Panel Ion Doping System FPD
Mitsuaki Harada Stability Improvement of Therma-Wave Signal by Pre-Annealing MC
2000IIT Author Title Related I/I
Hiroyuki Kariya Energy enhancement on NV-GSD-HE HE
Hiroshi Kawaguchi Wafer Charge Monitoring by Disk Current HC
Hiroshi Kawaguchi Monitoring System of Silicon Coating Thickness of Disk HC
Takao Morita Cross-Contamination Reduction by Beam Cleaning HC
Hiroki Murooka Energy Contamination Control System in Deceleration Beam Line HC
Makoto Sano Dose Control Accuracy in Pressure Compensation HC,HE
Noriyuki Suetsugu Energy accuracy and control method of the NV-GSD-HE HE
1998IIT Author Title Related I/I
Oliver F.Campbell
Introducing theMC3 Medium Current 300mm Implanter MC
Michiro Sugitani Introducing the NV-GSD-HE3, A New High Energy Implanter HE
Junnichi Murakami NV-GSD-HC3 300mm High Current Ion Implantation System HC
I.Jonoshita ELS2FExtended Life Source with Dual Cathode HE
Makoto Sano Monitoring System of Reliability and Repeatability of Pressure Compensation HC
Mitsukuni Tukihara Automatic LINAC Parameter Generation HE
Tohru Murakami Beam Tuning with Continuously Variable Aperture HE
Hiroyuki Kariya Automatic Generation of Pressure Compensation Factors HC
1996IIT Author Title
Purity of Low Energy Beams in R. F. Linear Accelerator Based Implanters HE
In-situ Ion Beam Profiling by Fast Scan Sampling HC
1994IIT Author Title Related I/I
Junnichi Murakami Compact High Current Ion Implantation System HC
1992IIT Author Title Related I/I
Tadamoto Tamai NV-GSD-A High Current Ion Implantation System HC
Frank Sinclair
Multiple Twist Implants: Channeling Avoidance with Full Symmetry HC,HE
1990IIT Author Title Related I/I
Tadamoto Tamai Mechanically scanned ion implanters with two-axis disk tilt capability HC,HE
1988IIT Author Title Related I/I
T.Higuchi A Wafer Charge-up-reducing system of a High-current Ion Implanter HC
Keiji Okada The NV-10SD High-current Ion Implantation system HC
IWJT2014 Author Title Related I/I
Yoji Kawasaki Monitoring of W Accumulation in Ion Implanter Beam Line Utilizing Portable XRF Instrument MC application
Genshu Fuse Significant Roles of Ultra-High Energy Ion Implanter for High Performance Image Sensing Devices HE
IWJT2011 Author Title Related I/I
Shiro Ninomiya New Combination of Damage Control Techniques Using SEN's Single-wafer Implanters MC
Shiro Ninomiya Advanced Yield-Growth Method: MIND+(plus) System MC, HC
Genshu Fuse Feasibility Study of Plasma Doping using B2H6 and PH3 Shallow Junction PD
IWJT2009 Author Title Related I/I
Shiro Ninomiya Vth Control by Halo Implantation using the SEN's MIND system MC
IWJT2008 Author Title Related I/I
Shiro Ninomiya Controlled Dose-Modulated Ion Implantation on Serial Implanters MC,HC
Hisaki Izutani COO Reduction on Polysilicon Gate Doping by Beam Current Increase on Batch-Type Implanters HC
IWJT2007 Author Title Related I/I
Genshu Fuse Requirements of the Low Energy Boron Halo Implantation for the Next Generation of LOP/LSTP Devices MC
Makoto Sano Accurate Dose Control in High Pressure Condition on Medium Current Ion Implanters MC
Academic Conference Author Title Related I/I
CSTIC2014 Genshu Fuse Fundamentals of Ion Implantation Technologies for Image Sensing Devices MC, HC, HE
2014 ECS & SMEQ John O. Borland
Michiro Sugitani
Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology HC
IISW2013 Genshu Fuse Fundamental Ion Implantation Technologies for Image Sensor Devises MC, HC, HE
ICIS2013 Michiro Sugitani Ion Implantation Technology and Ion Sources MC, HC, HE
SSDM2010 Genshu Fuse; SEN Momentum Transfer Implantation for Sidewall Doping of FinFET's PD,HC
AWAD2008 Toshiharu Suzuki Precise Ion Implantation for Advanced MOS LSIs HC
Related Presentations Author Title Related I/I
IWJT2009 Emi Kanasaki; Panasonic Implant Damage Evaluation at High Energy and Low Dose Ion Implantation using White Defect of CCD Image Sensor HE
IWJT2007 J.O.Borland; JOB Latest Advances In Ion Implantation & Annealing for Gate and Channel (USJ) Doping Optimization HC
IWJT2002 Kenji Yoneda; Panasonic The Drain Current Asymmetry of 130 nm MOSFET's due to Extension Implant Shadowing Originated by Mechanical Angle Error in High Current Implanter HC
IWJT2002 Hirokazu Sayama; Renesas 55nm Gate CMOS Technology using Sub-keV Ion Implantation HC
IWJT2002 Yoji Kawasaki; Renesas The Angle Control within a Wafer in High-Energy Implanter of Batch Type HE
IIT98 S.Shibata; Panasonic Evaluation of High Dose Ion Implantation by Spectroscopic Ellipsometry HC
Papers Author Title Related I/I
JAP Toshibaru Suzuki Flat Panel Displays for Ubiquitous Product Applications and Related Impurity Doping Technologies FPD

For inquiry on the contents of Sumitomo Heavy Industries Ion Technology's R&D, please click here.

Sumitomo Heavy Industries Ion Technology Co., Ltd.