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> NV-GSD-HC3   > NV-GSDIII-180
> HC3-180  
SHX-II delivers highest productivity in mass production with the higher beam current compared to SHX, realizing the incomparable high quality in ultra low energy ion implantation necessary for the coming high quality source/drain extension implantations.

  • For 300mm/200mm wafers
  • Application to coming process of 20nm node
  • Highest productivity covering both middle and law doze implantation equipped with the high speed End Station
  • Highest beam current under 200eV with no energy contamination equivalent to drift mode implantation in volume manufacturing
  • Realization of high precision source/drain extension implantations through,
    • Incomparable uniformity over a wafer, including beam sizes and beam divergent angles, and
    • High quality of beam parallelism and repeatability within a wafer, making multiple-step implantations to compensate for implantation angle deviations and non-uniformity not necessary
  • Highest quality of energy purity equivalent to drift mode implantation at ultra low energy through an unique energy filter after deceleration.
  • Minimizing both metal contamination and cross contamination
  • Effective plasma shower system for wafer charging control
  • Highest reliability and maintainability

Sumitomo Heavy Industries Ion Technology Co., Ltd.