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LEX3
LEX3


> SHX-III/S > SHX-II
> SHX > LEX3-II
> LEX3 > LEX-II
> LEX > NV-GSDIII-LE
> NV-GSD-HC3   > NV-GSDIII-180
> HC3-180  
The LEX3, for 300 mm wafers, is the newest high-performance, high-current ion implantation system ready for future processes beyond 65 nm. This model features high productivity in ultra-low energy uses of down to 0.2 keV and minimal energy contamination.


  • For 300 mm wafers
  • Implantation energy between 0.2 keV and 70 keV
  • Substantially improved current value, compared to conventional systems, in the low energy region
    • Stabilization of beam optics at low energy by the use of a movable ion source
    • Improvement of beam convergence by the adoption of confinement magnets
    • Substantial expansion of the available range of drift mode, in which there is very little energy contamination
  • Installation of a deceleration mechanism that enhances productivity by ensuring the B beam at an ultra-low energy level of down to 0.2 keV
  • Reduced footprint and improved maintainability by optimization of the system layout
  • High accuracy of implantation
  • Low metal contamination and minimized cross-contamination by the installation of the VSD (Virtual Slit Disk), the TSDF (Triple Surface Disk Faraday), etc.
  • Minimization of charge buildup by the installation of a plasma shower system
  • High reliability and high maintainability



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