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HC3-180
HC3-180


> SHX-III/S > SHX-II
> SHX > LEX3-II
> LEX3 > LEX-II
> LEX > NV-GSDIII-LE
> NV-GSD-HC3   > NV-GSDIII-180
> HC3-180  
The HC3-180, for 300 mm wafers, is a high current ion implantation system that provides high productivity in the wide energy range between 2 keV and 180 keV.


  • Implantation energy between 2 keV and 180 keV (with post acceleration equipment installed)
  • High current density through the adoption of a high performance, long-life ion source (ELS)
  • High accuracy of implantation
  • Low metal contamination and minimized cross-contamination by the installation of the VSD (Virtual Slit Disk), the TSDF (Triple Surface Disk Faraday), etc.
  • Minimization of charge buildup by the installation of a plasma shower system
  • High reliability and high maintainability



Sumitomo Heavy Industries Ion Technology Co., Ltd.
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