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NV-GSD-HC3
NV-GSD-HC3


> SHX-III/S > SHX-II
> SHX > LEX3-II
> LEX3 > LEX-II
> LEX > NV-GSDIII-LE
> NV-GSD-HC3   > NV-GSDIII-180
> HC3-180  
The NV-GSD-HC3, for 300 mm wafers, is a high current ion implantation system for the high volume production of such devices as DRAMs. This model provides high productivity in ultra-low energy uses of down to 0.2 keV.


  • Implantation energy between 0.2 keV and 80 keV
  • High current with little energy contamination, for down to 0.2 keV, ensured by a deceleration mechanism
  • Installation of a high performance, long-life ion source (ELS)
  • High accuracy of implantation
  • High beam quality through low metal contamination and minimized cross-contamination by the installation of the VSD (Virtual Slit Disk), the TSDF (Triple Surface Disk Faraday), etc.
  • Minimization of charge buildup by the installation of a plasma shower system
  • High reliability and high maintainability



Sumitomo Heavy Industries Ion Technology Co., Ltd.
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