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–∂Rv
1983  
·   Established on April 1 as a 50-50 joint venture between Sumitomo Heavy Industries, Ltd. and Eaton Corp. of the U.S.
·   Starts manufacturing the NV-10, a high current ion implantation system.

1984  
·   Completes domestic production of the NV-10, a high current ion implantation system.
·   Starts shipment of the world's first high current ion implantation system for 150 mm wafers.

1987  
·   Newly develops and starts manufacturing the NV-10SD, a high current ion implantation system with a large-diameter single wafer disk end station (SD: Super Disc) installed.

1989  
·   Newly develops and starts manufacturing the NV-GSD-80, a high current ion implantation system with a load-lock high-throughput end station (GSD: Gyro Super Disk) installed.

1991  
·   Starts shipment of the NV-GSD-A, a high current ion implantation system featuring an increased beam current for higher throughput for 200 mm wafers.

1994  
·   Starts shipment of the NV-GSD-HE, a high-energy ion implantation system ready for volume production developed jointly with Eaton Corp. The model becomes a world standard.
·   Starts shipment of the NV-GSD III-90, a high current ion implantation system that features high throughput and a compact size by adopting a newly developed beam line.

1995  
·   Completes the construction of the Ehime Plant F building and a new clean room.

1996  
·   Completes the construction of the Ehime Plant G building, doubling production capacity.

1997  
·   Starts shipment of the NV-GSD III-90E, a high current ion implantation system featuring increased beam current at low energy region.
·   Completes the NV-GSD-HC3, a high current ion implantation system for 300 mm wafers.
·   Starts importing and selling the ORion NV-6072, an Eaton-made ion implantation system for low temperature polysilicon TFT-LCDs.

1998  
·   Starts shipment of the NV-GSDIII-LE, a 1 keV class low-energy high-current ion implantation system with a completely new beam line.
·   Starts shipment of the NV-GSD-HE3, a high-energy ion implantation system for 300 mm wafers.

1999  
·   Establishes Sense Corporation to enter the business of recycling and selling used systems.
·   Gains ISO-9001 accreditation.

2000  
·   Eaton Corp. spins off its semiconductor equipment business, which is incorporated as Axcelis Technologies,Inc. and is listed on NASDAQ.
·   Starts shipment of the NV-MC3, a medium current ion implantation system ready for 300 mm wafers.
·   The cumulative total of systems shipped exceeds 500.
·   Transfers the NV-GSD-LE technology to Axcelis, which starts its production in the U.S.

2001  
·   Starts shipment of the LEX, a 200 eV class ultra-low energy high-current ion implantation system.
·   Domestically develops and starts shipping the ORion II NV-7392, an ion implantation system for flat panels.

2002  
·   Starts shipment of the LEX3, an ultra-low energy high-current ion implantation system for 300 mm wafers.
·   Gains ISO-14001 accreditation.

2003  
·   Starts shipment of the ORion II NV-6275, an ion implantation system for flat panels.

2004  
·   Starts shipment of the LEX3-II , ultra-low energy high-current ion implantation system for 300mm wafers with drastically improved beam current at low energy region.

2005  
·   Starts shipment of the SHX , a new generation single wafer high-current ion implantation system with ultra-low energy implantation capabilities covering future 45nm processes.
2006  
·   Changed its name to SEN Corporation, an SHI and Axcelis Company.
2009  
·   Changed its name toSEN Corporation
2015  
·   Changed its name to Sumitomo Heavy Industries Ion Technology Co., Ltd.

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